منابع مشابه
SiC-BASED POWER CONVERTERS
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passiv...
متن کاملSiC-based Power Converters for High Temperature Applications
As commercial-grade silicon carbide (SiC) power electronics devices become available, the application of these devices at higher temperatures or frequencies has gained interest. This paper contains temperature-dependent loss models for SiC diodes and JFETs and simulations for different power converters that are useful for predicting the efficiency of these converters. Additionally, tests to cha...
متن کاملComparative Study of Optimally Designed DC-DC Converters with SiC and Si Power Devices
In this chapter, power losses and mass of optimally designed Sivs. SiC-based isolated DC-DC converters are compared in quantitative terms. To that end, an adapted version of a computer-aided design tool, previously published by the authors, is used. The database of the existing tool was completed with new wide band gap semicon‐ ductor devices currently available from manufacturers. The results ...
متن کاملSwitching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...
متن کاملControl Method of Impedance Network in SiC Power Converters for HEV/EV
Silicon carbide (SiC) devices provide significant performance improvements in many aspects, including lower power dissipation, higher operating temperatures, and faster switching, compared to conventional Si devices. All these features helped increase the interest in the applications of these devices for electric drive systems. The inclusion of an impedance network to elevate DC voltage would i...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2008
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-1069-d12-01